The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jan. 14, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H10D 1/696 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/017 (2025.01);
Abstract
A semiconductor device includes a semiconductor fin, a gate structure, a capacitor structure, a conductive contact, and a hard mask layer. The gate structure is disposed across the semiconductor fin. The capacitor structure is disposed on the gate structure. The capacitor structure includes a ferroelectric layer. The conductive contact is disposed on the capacitor structure. The hard mask layer laterally surrounds the conductive contact. The conductive contact protrudes from a top surface of the hard mask layer.