The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Sep. 10, 2020
Enkris Semiconductor, Inc., Jiangsu, CN;
Kai Cheng, Jiangsu, CN;
ENKRIS SEMICONDUCTOR, INC., Jiangsu, CN;
Abstract
The present application provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a semiconductor substrate, a heterojunction structure, a cap layer, a first passivation layer and a second passivation layer disposed from bottom to up; a trench penetrating through the first passivation layer and the second passivation layer; and a P-type semiconductor layer located at least on an inner wall of the trench. After a part of the second passivation layer is dry etched to form the trench, the first passivation layer can be used for etching endpoint detection to avoid over etching. A part of the first passivation layer exposed by the trench of the second passivation layer can be removed by wet etching.