The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Oct. 28, 2021
International Business Machines Corporation, Armonk, NY (US);
École Supérieure DE Physique ET DE Chimie Industrielles, Paris, FR;
Aakash Pushp, San Jose, CA (US);
M A Mueed, San Jose, CA (US);
Benjamin Madon, Cupertino, CA (US);
Noel Arellano, Gilroy, CA (US);
Krystelle Lionti, San Jose, CA (US);
Gregory Michael Wallraff, San Jose, CA (US);
Anthony Bock Fong, San Jose, CA (US);
Brian Peter Hughes, San Jose, CA (US);
Vincent Ouazan-Reboul, Gottingen, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.