The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Dec. 12, 2022
Applicant:

Metal Industries Research & Development Centre, Kaohsiung, TW;

Inventors:

Wei-Chen Tien, Chiayi, TW;

Cheng-Yuan Hung, Kaohsiung, TW;

Chang-Sin Ye, Tainan, TW;

Chun-Kai Huang, Kaohsiung, TW;

Yii-Der Wu, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32834 (2013.01); H01L 21/02178 (2013.01);
Abstract

A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and a gas inlet of the high temperature furnace, respectively. The working gas dissociated in the plasma-induced dissociator is introduced into the high temperature furnace via the connecting duct.


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