The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jun. 30, 2022
Advanced Micro Devices, Inc., Santa Clara, CA (US);
Michael Edward Griffith, Ft. Collins, CO (US);
Aaron Keiichi Horiuchi, Ft. Collins, CO (US);
Donald A. Clay, Boxborough, MA (US);
Eric William Busta, Ft. Collins, CO (US);
Hye Jung Stanford, Austin, TX (US);
Kathryn E. Wilcox, Boxborough, MA (US);
Ruochen Xie, Shanghai, CN;
Russell Schreiber, Austin, TX (US);
Stephen J. Dussinger, Ft. Collins, CO (US);
William Edwin Laub, Jr., Boxborough, MA (US);
Te-Hsuan Chen, Boxborough, MA (US);
Advanced Micro Devices, Inc., Santa Clara, CA (US);
Abstract
A system and method for efficiently designing a through silicon via (TSV) macro blocks are described. In various implementations, the circuitry of a processor executes instructions of a place and route tool that provides automatic placement of macro blocks and standard cells on an integrated circuit die based on a copy of a netlist of the integrated circuit being designed and a copy of a standard cell library that includes a variety of standard cells and macro blocks. The processor places two functional macros in the floorplan with a channel between them. In the channel, the processor places a TSV macro that includes at least one boundary cell inside of the TSV macro. The processor prevents placement of a boundary cell adjacent to at least one side of the TSV macro despite empty space exists due to no standard cells or macros about the at least one side.