The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Dec. 16, 2022
Micron Technology, Inc., Boise, ID (US);
Ching-Huang Lu, Fremont, CA (US);
Yingda Dong, Los Altos, CA (US);
Sampath K. Ratnam, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Control logic in a memory device executes a programming operation to program a memory cell of a set of memory cells to a programming level. A first erase sub-operation is executed to erase the memory cell to a first threshold voltage level, the first erase sub-operation including applying, to the memory cell, a first erase pulse having a first erase voltage level. A second erase sub-operation is executed to erase the memory cell to a second threshold voltage level, the second erase sub-operation including applying, to the memory cell, a second erase pulse having a second erase voltage level, where the first erase voltage level of the first erase pulse is lower than the second erase voltage level of the second erase pulse.