The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Apr. 25, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Keith Donegan, Saratoga Springs, NY (US);

Thomas Houghton, Marlboro, NY (US);

Yusheng Bian, Ballston Lake, NY (US);

Karen Nummy, Newburgh, NY (US);

Kevin Dezfulian, Arlington, VA (US);

Takako Hirokawa, Ballston Lake, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/30 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
G02B 6/305 (2013.01); G02B 6/42 (2013.01); G02B 6/4206 (2013.01);
Abstract

Structures including a cavity adjacent to an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate including a cavity with a sidewall, a dielectric layer on the semiconductor substrate, and an edge coupler on the dielectric layer. The structure further comprises a fill region including a plurality of fill features adjacent to the edge coupler. The fill region includes a reference marker at least partially surrounded by the plurality of fill features, and the reference marker has a perimeter that surrounds a surface area of the dielectric layer, and the surface area overlaps with a portion of the sidewall of the cavity.


Find Patent Forward Citations

Loading…