The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Jun. 30, 2021
Applicant:

Exo Imaging, Inc., Redwood City, CA (US);

Inventors:

Naresh Mantravadi, San Jose, CA (US);

Haesung Kwon, Austin, TX (US);

Brian Bircumshaw, Oakland, CA (US);

Assignee:

Exo Imaging, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B06B 1/06 (2006.01); B06B 1/02 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0021 (2013.01); B06B 1/0292 (2013.01); B06B 1/0603 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); B81C 2203/036 (2013.01);
Abstract

Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.


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