The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Feb. 08, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Ting Chiu, Hsinchu County, TW;
Ying-Jui Huang, Hsinchu County, TW;
Chien-Ling Hwang, Hsinchu, TW;
Ching-Hua Hsieh, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 65/00 (2006.01); B32B 37/18 (2006.01); B29C 65/02 (2006.01); B29C 65/20 (2006.01); B29C 65/70 (2006.01); B29C 65/78 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
B32B 37/18 (2013.01); B29C 65/02 (2013.01); B29C 65/2076 (2013.01); B29C 65/70 (2013.01); B29C 65/7847 (2013.01); B29C 66/00145 (2013.01); B29C 66/472 (2013.01); B32B 2307/204 (2013.01); B32B 2307/538 (2013.01); B32B 2307/732 (2013.01); B32B 2309/02 (2013.01); B32B 2309/68 (2013.01); B32B 2319/00 (2013.01); B32B 2457/14 (2013.01); H01L 21/4853 (2013.01); H01L 21/568 (2013.01); H01L 24/19 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 2224/19 (2013.01); H01L 2224/8385 (2013.01);
Abstract
A method for laminating a film to a wafer and apparatus for performing the lamination process are disclosed. The method includes providing the wafer and the film in a process chamber where the wafer and the film are separated from each other, achieving a vacuum state and a process temperature in the process chamber, and laminating the film to contact a surface of the wafer.