The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Oct. 20, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wen-Jen Wang, Tainan, TW;

Yu-Huan Yeh, Hsinchu, TW;

Chuan-Fu Wang, Miaoli County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H01L 23/48 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H01L 23/481 (2013.01); H10B 63/00 (2023.02); H10N 70/061 (2023.02);
Abstract

A resistive memory device includes a dielectric layer, a via connection structure, a stacked structure, and an insulating structure. The via connection structure is disposed in the dielectric layer. The stacked structure is disposed on the via connection structure and the dielectric layer. The insulating structure penetrates through the stacked structure in a vertical direction and divides the stacked structure into a first memory cell unit and a second memory cell unit. The first memory cell unit includes a first bottom electrode, and the second memory cell unit includes a second bottom electrode separated from the first bottom electrode by the insulating structure. The via connection structure is electrically connected with the first bottom electrode and the second bottom electrode.


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