The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 27, 2022
United Microelectronics Corp., Hsinchu, TW;
Shun-Yu Huang, Kaohsiung, TW;
Yi-Wei Tseng, New Taipei, TW;
Chih-Wei Kuo, Tainan, TW;
Yi-Xiang Chen, Tainan, TW;
Hsuan-Hsu Chen, Tainan, TW;
Chun-Lung Chen, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating an MTJ device is provided including the following process. A first via is formed in the first dielectric layer. A first electrode layer is formed on the first dielectric layer and the first via. An MTJ stack layer is formed on the first electrode layer. A patterned second electrode layer is formed on the MTJ stack layer and used as a mask. A first ion beam etching process is performed to etch the patterned second electrode layer and pattern the MTJ stack layer and the first electrode layer to form a second electrode, an MTJ stack structure, and a first electrode. A first protective layer is formed to cover the second electrode and the MTJ stack structure. A second ion beam etching process is performed to remove a portion of the MTJ stack structure and a portion of the first electrode.