The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Lien Huang, Jhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various semiconductor techniques described herein enable reductions in one or more sizes of a fin field-effect transistor (finFET) and/or increasing one or more sizes of a finFET. In various implementations described herein, a material may be used to reduce the one or more x-direction sizes of the finFET by selective deposition while enabling the one or more y-direction sizes of the finFET to be increased or enlarged by etching. The x-direction size of a source or drain of the finFET, the x-direction size of an active region of the finFET, and/or the x-direction size of a polysilicon region of the finFET may be increased by selective deposition of a boron nitride (BN), a boron carbide (BC), a boron oxide (BO) (e.g., boric oxide (BO), a fluorocarbon (CxFy) polymer, and/or another material.