The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jun. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Cheng Chu, Chiayi, TW;
Tzu-Hsiang Hsu, Hsinchu County, TW;
Pin-Cheng Hsu, Hsinchu County, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A transistor includes a gate electrode, a gate dielectric, a channel layer and a source line and bit line. The gate electrode includes a first gate material layer and a second gate material layer disposed on the first gate material layer, wherein a work function of the first gate material layer is lower than a work function of the second gate material layer. The gate dielectric is disposed on the gate electrode. The channel layer is disposed on the gate dielectric. The source line and bit line are disposed on and connected to the channel layer.