The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Mar. 25, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H01L 23/34 (2006.01); H10D 30/67 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10D 64/254 (2025.01); H10D 30/0212 (2025.01); H10D 64/01 (2025.01); H10D 64/251 (2025.01); H10D 64/256 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/017 (2025.01); H01L 23/345 (2013.01); H10D 30/6713 (2025.01); H10D 84/811 (2025.01);
Abstract
A semiconductor device includes: a first arrangement including first and second silicide layers correspondingly electrically coupled to opposing first and second sides of a doped first portion of an active region; and a second arrangement including a third silicide layer electrically coupled to a first or second side of a doped second portion of the active region.