The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jun. 22, 2022
International Business Machines Corporation, Armonk, NY (US);
Heng Wu, Santa Clara, CA (US);
Junli Wang, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Albert M. Young, Fishkill, NY (US);
Albert M. Chu, Nashua, NH (US);
Brent A. Anderson, Jericho, VT (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A field effect transistor ('FET') stack, including a lower FET, and an upper FET, a first contact to a lower source drain of the lower FET, a first silicide between the first contact and the lower source drain, the first contact is adjacent to a vertical side surface of the lower source drain, a first overlap region between the first silicide and the first contact is less than a second overlap region between the first silicide and the first source drain. The first contact has a reverse tapper metal stud profile. Forming a first contact to a lower source drain of a lower FET of an FET stack, forming a first silicide between the first contact and the lower source drain, the first contact is adjacent to a vertical side surface of the lower source drain.