The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Aug. 16, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinhong Park, Seoul, KR;
Jiwan Koo, Suwon-si, KR;
Maksim Andreev, Suwon-si, KR;
Sahwan Hong, Suwon-si, KR;
Seunghwan Seo, Incheon, KR;
Juhee Lee, Ansan-si, KR;
Bongjin Kuh, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwon-si, KR;
Abstract
A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.