The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Aug. 31, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Ging Lin, Hsinchu, TW;
Chih-Chang Hung, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first channel region extending in a first lateral direction, and comprising a first epitaxial structure; a second channel region extends in the first lateral direction, next to the first channel region along a second lateral direction, and comprising a pair of second epitaxial structures; a third channel region formed over the substrate, extending in the first lateral direction, disposed next to the first channel region along the second lateral direction, and comprising a pair of third epitaxial structures; first and second metal gate structures extend in the second lateral direction and traverse the second and third channel regions, respectively. A first upper portion of the dielectric structure has its opposite sidewalls tilted away from each other along a vertical direction extending from a top surface of the dielectric structure toward the substrate.