The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jun. 04, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsiao-Chun Chang, Hsinchu County, TW;

Guan-Jie Shen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/024 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a fin region formed on a substrate, wherein the fin region includes multiple channels vertically stacked on the substrate; a gate stack disposed on the fin region, wherein the gate stack is wrapping around each of the multiple channels and includes gate extensions being extending laterally to be overlapped with inner spacers; and a pair of source/drain (S/D) features formed on the fin region, interposed by the gate stack, and connected with the multiple channels.


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