The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Oct. 25, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Brent A. Anderson, Jericho, VT (US);
Reinaldo Vega, Mahopac, NY (US);
Albert M. Chu, Nashua, NH (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a semiconductor wafer having a first transistor and a second transistor; a first source/drain (S/D) contact of the first transistor; a second S/D contact of the second transistor; and a cut region between the first S/D contact and the second S/D contact, wherein the cut region includes a liner of a first dielectric material and a filler of a second dielectric material that is different from the first dielectric material, the liner lining at least a part of the first S/D contact and a part of the second S/D contact, and the filler being directly adjacent to the liner and between the first S/D contact and the second S/D contact. A method of manufacturing the semiconductor structure is also provided.