The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Nov. 29, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Karthik Sarpatwari, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 11/405 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
H10B 12/00 (2023.02); G11C 11/405 (2013.01); G11C 11/4096 (2013.01);
Abstract

Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a first conductive structure, a second conductive structure, a conductive portion coupled to one of the conductive structures, and a memory cell. The memory cell includes different semiconductor portions located on different levels of the apparatus and separated from each other by a dielectric portion. The first semiconductor portion is coupled to the first and second conductive structures. The second semiconductor portion is coupled to the first conductive structure. The memory cell includes a charge storage structure coupled to the second semiconductor portion. The charge storage structure includes multiple portions. Part of the conductive portion is located between portions of the charge storage structure and separated from the charge storage structure by a dielectric material.


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