The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Aug. 30, 2023
Applicants:

Nexperia B.v., Nijmegen, NL;

Nexperia Technology (Shanghai) Ltd., Shanghai, CN;

Inventor:

Loveday Haachitaba Mweene, Santa Clara, CA (US);

Assignees:

NEXPERIA B.V., Nijmegen, NL;

Nexperia Technology (Shanghai) Ltd., Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/10 (2006.01);
U.S. Cl.
CPC ...
H03K 17/102 (2013.01);
Abstract

A voltage gate driver for a semiconductor-based transistor is provided, including a voltage generator circuit arranged for receiving a drive voltage, the voltage generator circuit includes a capacitor connected in series with a Zener diode, a cathode of the Zener diode is arranged to be connected to a gate of the semiconductor-based transistor and a bias current circuit, connected in parallel over the capacitor, the bias current circuit includes a switch and is arranged to provide a bias current to the cathode of the Zener diode based on a state of the switch, and the bias current circuit is arranged to provide the bias current to the cathode of the Zener diode when the switch is in a closed state, and arranged to prevent provision of the bias current to the cathode of the Zener diode when the switch is in an open state.


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