The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Aug. 13, 2020
Enkris Semiconductor, Inc., Jiangsu, CN;
Kai Cheng, Jiangsu, CN;
ENKRIS SEMICONDUCTOR, INC., Jiangsu, CN;
Abstract
An N-face polar GaN-based device, a composite substrate thereof, and a method of manufacturing the composite substrate are provided in the present disclosure. The N-face polar GaN-based composite substrate includes: a semiconductor substrate, an insulating layer on the semiconductor substrate and a GaN-based material layer on upper surface of the insulating layer; a surface of the GaN-based material layer attached to the insulating layer is Ga-face, and a surface of the GaN-based material layer away from the insulating layer is an N-face. In the present disclosure, the transfer technology is adopted to replace the direct epitaxial growth, which overcomes the difficult growth process, and the N-face polar GaN-based composite substrate with better quality can be obtained.