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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12482658 B1

PDFFull Text
Date of Patent:
Nov. 25, 2025

Filed:

Mar. 25, 2022

Conductive features of semiconductor devices and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yu Shan Lee, Taichung, TW;

Fa-Wei Huang, Taichung, TW;

Yu-Shao Cheng, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Britt D Hanley

Assistant Examiner:

Victor V Barzykin

Int. Cl.
CPC ...
H01L 21/28 (2025.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 30/69 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); C23C 16/14 (2013.01); C23C 16/45525 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 64/017 (2025.01); H10D 64/667 (2025.01); H10D 30/797 (2025.01); H10D 62/822 (2025.01);
Abstract

A method of forming a semiconductor device includes forming a first layer over a substrate in a deposition chamber with a first deposition cycle and forming a second layer over the substrate in the deposition chamber with a second deposition cycle. The first deposition cycle includes flowing a first process gas over the substrate and flowing a second process gas over the substrate. The second deposition cycle includes flowing a third process gas over the substrate and flowing a fourth process gas over the substrate.

Find Patent Forward Citations

Lee, Yu. (2025). Conductive features of semiconductor devices and methods of forming the same (U.S. Patent No. 12482658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12482658

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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