The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

May. 02, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yuan He, Boise, ID (US);

Wenlun Zhang, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/4072 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4072 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 11/4096 (2013.01);
Abstract

Methods, systems, and devices for techniques for memory cell reset using dummy word lines are described. A memory device may activate, as part of a reset operation, one or more dummy word lines to couple a voltage node with a bit line to supply the bit line with a reset voltage supplied to the voltage node. The memory device may then activate one or more word lines to couple the bit line with one or more memory cells to supply the one or more memory cells with the reset voltage such that the one or more memory cells are reset. In some cases, the memory device may disable one or more components of a sense amplifier coupled with the bit line during the reset operation to support the voltage node supplying the bit line with the reset voltage.


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