The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Apr. 17, 2020
Versum Materials Us, Llc, Tempe, AZ (US);
Xinjian Lei, Vista, CA (US);
Ming Li, Tempe, AZ (US);
Matthew R. Macdonald, Mission Viejo, CA (US);
Meiliang Wang, Shanghai, CN;
Versum Materials US, LLC, Tempe, AZ (US);
Abstract
An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500° C. is performed using at least one organoaminodisilazane precursor having the following Formula I: wherein Rand Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group with a proviso that Rand Rcannot be both hydrogen; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; and either Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure.