The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Oct. 15, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Eric A. Hudson, Berkeley, CA (US);
Chia-Chun Wang, Fremont, CA (US);
Sumit Agarwal, Arvada, CO (US);
Ryan James Gasvoda, Golden, CO (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 1/00 (2006.01); B05D 3/00 (2006.01); B05D 3/14 (2006.01);
U.S. Cl.
CPC ...
B05D 1/60 (2013.01); B05D 3/002 (2013.01); B05D 3/145 (2013.01); B05D 2203/30 (2013.01);
Abstract
Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.