The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Oct. 11, 2022
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Sanjeev Aggarwal, Scottsdale, AZ (US);

Shimon, Singapore, SG;

Kerry Joseph Nagel, Scottsdale, AZ (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/01 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/01 (2023.02); H10B 61/22 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02);
Abstract

A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.


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