The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Oct. 11, 2022
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Yan Lai, Nijmegen, NL;

Phil Rutter, Nijmegen, NL;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/611 (2025.01);
Abstract

This disclosure relates to a semiconductor device, and associated method of manufacture. The semiconductor device includes, a MOSFET integrated with a p-n junction, the p-n junction arranged as a clamping diode across a source contact and a drain contact of the MOSFET. The MOSFET defines a first breakdown voltage, and the clamping diode defines a second breakdown voltage, and the first breakdown voltage is greater than the second breakdown voltage. A series resistance of the clamping diode includes a drift resistance and a clamping resistance, and the drift resistance is formed together with the clamping diode and the clamping resistance is formed independently from the clamping diode and configured to secure a uniform avalanche current.


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