The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Nov. 10, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chen Zhang, Guilderland, NY (US);
Albert M. Young, Fishkill, NY (US);
Brent A. Anderson, Jericho, VT (US);
Kisik Choi, Watervliet, NY (US);
Junli Wang, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A microelectronic structure including a first stacked FET device that includes a first bottom FET device and a first upper FET device. The first bottom FET device include a plurality of first bottom channel layers, and the first upper FET device includes a plurality of first upper channel layers. A bottom gate that surrounds the plurality of first bottom channel layers and an upper gate that surrounds the plurality of first upper channel layers. A gate protrusion that extends downwards from the backside of the upper gate to connected to the bottom gate. The gate protrusion partially overlaps with a bottom gate cut region of the first bottom stacked FET device, and the gate protrusion partially overlaps with an upper gate cut region of the first upper stacked FET device.