The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Apr. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yan-Ting Lin, Hsinchu County, TW;
Chien-I Kuo, Chiayi County, TW;
Chii-Horng Li, Hsinchu County, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a plurality of channel layers above a (110)-orientated substrate, the channel layers arranged in a <110> direction normal to a top surface the (110)-orientated substrate and extending in a <10> direction perpendicular to the <110> direction; epitaxial growing a plurality of silicon layers on either side of each of the channel layers; doping the silicon layers with boron; epitaxial growing a plurality of first silicon germanium layers on the silicon layers; forming a gate structure surrounding each of the channel layers.