The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Sep. 25, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/3065 (2006.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0245 (2025.01); H01L 21/3065 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/797 (2025.01); H10D 62/292 (2025.01); H10D 64/017 (2025.01); H10D 62/822 (2025.01);
Abstract
A manufacturing process and device are provided in which a first opening in formed within a substrate. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed with a radical etch in which neutral ions are utilized. As such, substrate push is reduced.