The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jul. 22, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Jau-Yi Wu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); H01F 10/32 (2006.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 61/10 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H01F 10/3254 (2013.01); H10N 50/80 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/8833 (2023.02);
Abstract
A memory device includes a bottom electrode, a selector, a memory layer, and a top electrode. The selector is over the bottom electrode. A sidewall of the bottom electrode and a sidewall of the selector are coterminous. The memory layer is formed over the selector and has a width greater than a width of the selector. A top electrode is formed over the memory layer.