The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Apr. 29, 2022
Applicants:

Tanay A. Gosavi, Portland, OR (US);

Chia-ching Lin, Portland, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Dmitri Evgenievich Nikonov, Beaverton, OR (US);

Ian Alexander Young, Olympia, WA (US);

Ramamoorthy Ramesh, Moraga, CA (US);

Darrell G. Schlom, Ithaca, NY (US);

Megan E. Holtz, Lakewood, CO (US);

Rachel A. Steinhardt, Beaverton, OR (US);

Inventors:

Tanay A. Gosavi, Portland, OR (US);

Chia-Ching Lin, Portland, OR (US);

Sasikanth Manipatruni, Portland, OR (US);

Dmitri Evgenievich Nikonov, Beaverton, OR (US);

Ian Alexander Young, Olympia, WA (US);

Ramamoorthy Ramesh, Moraga, CA (US);

Darrell G. Schlom, Ithaca, NY (US);

Megan E. Holtz, Lakewood, CO (US);

Rachel A. Steinhardt, Beaverton, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/18 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H03K 19/18 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

Magnetoelectric spin-orbit logic (MESO) devices comprise a magnetoelectric switch capacitor coupled to a spin-orbit coupling structure. The logic state of the MESO device is represented by the magnetization orientation of the ferromagnet of the magnetoelectric switch capacitor and the spin-orbit coupling structure converts the magnetization orientation of the ferromagnet to an output current. MESO devices in which all or at least some of the constituent layers of the device are perovskite materials can provide advantages such as improved control over the manufacturing of MESO devices and high quality interfaces between MESO layers due to the lattice matching of perovskite materials.


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