The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Oct. 17, 2023
Applicant:

Tagore Technology, Inc., Arlington Heights, IL (US);

Inventors:

Syed Asif Eqbal, Bihar, IN;

Arnesh Sen, Howrah, IN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/00 (2006.01); H03K 17/14 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A temperature-adaptive gate driver for a GaN switch includes a gate-to-source voltage adjustment unit and a driver for outputting an on-state gate-to-source voltage to a gate terminal of the switch. The on-state gate-to-source voltage is adjusted based, in part, on temperature of the switch. The amount of adjustment of the on-state gate-to-source voltage with rise in temperature is based, in part, on high-temperature gate-bias reliability data of the switch and is chosen for a favorable trade-off between performance and life-time. The gate-to-source voltage adjustment unit includes a temperature sense element for sensing temperature of the switch and outputs to the driver an output signal based, in part, on temperature. The gate-to-source voltage adjustment unit includes a regulator for receiving a feedback signal based in part, on resistance of the temperature sense element, and for causing a value of the output signal to be responsive to a value of the feedback signal.


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