Semiconductor structure and manufacturing method of semiconductor structure

Abstract

A manufacturing method of a semiconductor structure includes: providing substrate including array area and peripheral area, where peripheral area includes mark area and blank area adjoining mark area; forming, on substrate, target layer and first core layer disposed on target layer, first core layer including first array core layer disposed on array area, first mark core layer disposed on mark area and first cap layer disposed on blank area, where first cap layer has inclined sidewall, and its top dimension is smaller than its bottom dimension; forming first dielectric layer covering sidewall of first core layer; forming first filling layer covering surface of first dielectric layer and filling gap in first core layer; and etching first dielectric layer and target layer along sidewalls of first array core layer and first mark core layer to transfer pattern of first core layer and pattern of first filling layer to target layer.