The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jun. 30, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ching-Yu Huang, Hsinchu, TW;
Shih-Wei Peng, Hsinchu, TW;
Chia-Tien Wu, Taichung, TW;
Wei-Cheng Lin, Taichung, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second conductive layers, a first epitaxial structure and a first via structure. The first conductive layer extends along a first direction, and provides a first reference voltage signal. The second conductive layer extends along the first direction, and is separated from the first conductive layer along a second direction. The first epitaxial structure is disposed between the first conductive layer and the second conductive layer, and has a first width along the first direction. The first via structure is disposed between the first conductive layer and the second conductive layer, and transmits the first reference voltage signal from the first conductive layer through the second conductive layer to the first epitaxial structure. The first via structure has a second width along the first direction. The second width is approximately equal to or larger than twice of the first width.