The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Nov. 29, 2021
Applicant:

Mediatek Singapore Pte. Ltd., Singapore, SG;

Inventors:

Chang Liang, Singapore, SG;

Jinghao Chen, Singapore, SG;

Zhigang Duan, Singapore, SG;

Kuei-Ti Chan, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/50 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 25/16 (2013.01); H10D 1/68 (2025.01);
Abstract

A semiconductor structure includes a substrate, a first semiconductor die, a second semiconductor die, and a multi-terminal capacitor structure. The substrate includes a wiring structure. The first semiconductor die and the second semiconductor die are disposed over the substrate. The multi-terminal capacitor structure is embedded in the substrate. The multi-terminal capacitor structure includes a first positive terminal and a first ground terminal which are electrically coupled to the first semiconductor die through the wiring structure. The multi-terminal capacitor structure also includes a second positive terminal and a second ground terminal which are electrically coupled to the second semiconductor die through the wiring structure.


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