The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Lung Tung, Kaohsiung, TW;

Xiaodong Wang, Hsinchu, TW;

Jhon Jhy Liaw, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H10D 84/834 (2025.01); H10D 84/853 (2025.01);
Abstract

A structure includes first and second cells next to each other and having first and second cell heights, respectively, along a column direction. Each cell includes at least one semiconductor active region extending lengthwise along a row direction perpendicular to the column direction. The structure further includes an array of metal tracks over the first and second cells. The metal tracks are formed by a photolithography process having a half-pitch resolution Rin the row direction. A first pitch of the metal tracks along the row direction is greater than or equal to 2R. At least three rows of the metal tracks are in an area that is directly above the first and second cells and has a height equal to a sum of the first and second cell heights. A row of the metal tracks is disposed across a cell boundary of the first and second cells.


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