The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Sep. 12, 2023
Applicant:

Rambus Inc., San Jose, CA (US);

Inventor:

Thomas Vogelsang, Mountain View, CA (US);

Assignee:

Rambus Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4093 (2006.01); G11C 11/408 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 11/4087 (2013.01); G11C 11/4093 (2013.01);
Abstract

Technologies for dynamic random access memory (DRAM) devices with variable burst lengths are described. One DRAM device includes a first mode of operation having a first burst length and a first column address range and a second mode of operation having a second burst length and a second column address range. Only one of the first burst length and the second burst length is a power of two. A first product of the first column address range and the first burst length and a second product of the second column address range and the second burst length are substantially the same. The DRAM device includes an error correction code (ECC) block to generate, receive, and store ECC parity associated with data in the first mode of operation and the second mode of operation.


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