The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Aug. 16, 2023
Micron Technology, Inc., Boise, ID (US);
Massimo Ernesto Bertuccio, San Donato Milanese, IT;
Sead Zildzic, Jr., Folsom, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory device includes an array of memory cells, a plurality of access lines, and a controller. The array of memory cells includes a plurality of strings of series-connected memory cells. The controller is configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a first target level. The controller is further configured to apply a first voltage level to a first access line connected to the selected memory cell, and-apply a second voltage level higher than the first voltage level to a second access line adjacent to the first access line, apply a third voltage level between the first voltage level and the second voltage level to a third access line adjacent to the first access line and connected to an erased memory cell, and sense a first threshold voltage of the selected memory cell.