The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Feb. 14, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Rouhollah Mousavi Iraei, Albuquerque, NM (US);

Mini Goel, Milpitas, CA (US);

Hemant P. Rao, Albuquerque, NM (US);

Raymond Zeng, Cupertino, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 8/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 8/06 (2013.01); G11C 11/5642 (2013.01); G11C 11/5678 (2013.01);
Abstract

A memory device comprising a plurality of memory cells, a memory cell of the plurality of memory cells comprising a phase change material (PM) region and a select device (SD) region in series with the PM region; a first address line and a second address line coupled to the memory cell; and memory controller circuitry to interface with the first address line and the second address line, the memory controller circuitry to encode a state in the memory cell by applying, through the first address line and second address line, a current spike and a programming pulse to the memory cell to cause the PM region to be placed into an amorphous state and the SD region of the memory cell to be placed into a high threshold voltage state.


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