The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Aug. 11, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Tao Chou, New Taipei, TW;
Hsin-Cheng Lin, Taipei, TW;
Jih-Chao Chiu, New Taipei, TW;
Chee-Wee Liu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A memory device includes a memory array, a first reference voltage circuit, a first read voltage control circuit and a first write voltage control circuit. The first reference voltage circuit is configured to provide a first reference voltage signal having a first voltage level to the memory array. The first read voltage control circuit is configured to adjust the first reference voltage signal to a second voltage level when the memory array is read. The first write voltage control circuit is configured to adjust the first reference voltage signal to a third voltage level when the memory array is written. The second voltage level is higher than the first voltage level, and the third voltage level is lower than the first voltage level.