The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Nov. 22, 2022
Applicant:

D2s, Inc., San Jose, CA (US);

Inventors:

Donald Oriordan, Sunnyvale, CA (US);

Akira Fujimura, Saratoga, CA (US);

George Janac, Saratoga, CA (US);

Assignee:

D2S, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/31 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); G06N 3/08 (2023.01);
U.S. Cl.
CPC ...
G06F 30/31 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); G06N 3/08 (2013.01);
Abstract

Some embodiments provide a method for computing and displaying of minimum overlap for semiconductor layer interfaces, such as metal-via and metal-contact. The method leverages a machine-trained network (e.g., a trained neural network) to quickly, but accurately, infer the contours for the manufactured shapes across a range of process variations. The method also models the semiconductor process manufacturing layer-to-layer misalignment. The combined set of information (from the machine-trained network and from the modeling) is used by the method to compute the minimum overlap shapes at multiple layer interfaces. The method in some embodiments then uses the minimum overlap shapes to obtain an accurate calculation of the via or contact resistance.


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