The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 07, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Luca Porzio, Casalnuovo, IT;

Deping He, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0656 (2013.01); G06F 3/0604 (2013.01); G06F 3/0634 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

Methods, systems, and devices for write booster buffer and hibernate are described. The memory system may initiate a first operation to enter a first power mode having a lower power consumption than a second power mode. In some cases, the memory system may determine whether a quantity of data stored in a buffer of single-level cells associated with write booster information satisfies a threshold based on initiating the first operation. The memory system may determine whether to perform a second operation to transfer the quantity of data stored in the buffer of single-level cells to a portion of memory comprising multiple level cells based on determining whether the quantity of data satisfies the threshold. The memory system may enter the first power mode based on determining to perform the second operation to transfer the quantity of data from the buffer to the portion of memory.


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