The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Dec. 01, 2020
Applicant:

Heiq Materials Ag, Schlieren, CH;

Inventors:

Kyoungjun Choi, Thalwil, CH;

Hyung Gyu Park, Seoul, KR;

Murray Height, Newtown, AU;

Assignee:

HEIQ MATERIALS AG, Schlieren, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/186 (2017.01); A41D 31/102 (2019.01); B01D 71/02 (2006.01); B32B 5/02 (2006.01); B32B 7/12 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 37/12 (2006.01); C23C 14/16 (2006.01); C23C 14/30 (2006.01); C23C 14/34 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
B01D 71/0211 (2022.08); A41D 31/102 (2019.02); B32B 5/022 (2013.01); B32B 7/12 (2013.01); B32B 9/007 (2013.01); B32B 9/047 (2013.01); B32B 37/12 (2013.01); C01B 32/186 (2017.08); C23C 14/165 (2013.01); C23C 14/30 (2013.01); C23C 14/34 (2013.01); C23C 16/0209 (2013.01); C23C 16/0281 (2013.01); C23C 16/26 (2013.01); C23C 16/56 (2013.01); B32B 2250/02 (2013.01); B32B 2262/0292 (2013.01); B32B 2305/026 (2013.01); B32B 2305/18 (2013.01); B32B 2307/724 (2013.01); B32B 2307/7265 (2013.01); B32B 2307/73 (2013.01); B32B 2307/732 (2013.01); B32B 2313/04 (2013.01); B32B 2375/00 (2013.01); B32B 2437/00 (2013.01); B32B 2457/00 (2013.01);
Abstract

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.


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