The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jan. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Feng-Chien Hsieh, Pingtung County, TW;

Yun-Wei Cheng, Taipei, TW;

Kuo-Cheng Lee, Tainan, TW;

Cheng-Ming Wu, Tainan, TW;

Ping Kuan Chang, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/00 (2025.01); H01L 25/18 (2023.01); H10F 71/00 (2025.01); H10F 77/90 (2025.01);
U.S. Cl.
CPC ...
H10F 77/935 (2025.01); H01L 25/18 (2013.01); H10F 71/00 (2025.01); H10F 77/90 (2025.01); H10F 77/955 (2025.01);
Abstract

The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.


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