The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jan. 11, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Shih-Jung Tu, Tainan, TW;
Po-Wei Liu, Tainan, TW;
Tsung-Yu Yang, Tainan, TW;
Yun-Chi Wu, Tainan, TW;
Chien Hung Liu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.