The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Feb. 08, 2023
Applicant:
Uif (University Industry Foundation), Yonsei University, Seoul, KR;
Inventors:
Hyun Jae Kim, Seoul, KR;
Jong Bin An, Seoul, KR;
Sujin Jung, Seoul, KR;
Kunho Moon, Goyang-si, KR;
Jong Hyuk Ahn, Seoul, KR;
I Sak Lee, Paju-si, KR;
Dong Hyun Choi, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01);
Abstract
Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.