The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jul. 20, 2022
Micron Technology, Inc., Boise, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Jiewei Chen, Meridian, ID (US);
John D. Hopkins, Meridian, ID (US);
Everett A. Mcteer, Eagle, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a first vertical stack comprising vertically-alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. A second vertical stack is aside the first vertical stack. The second vertical stack comprises insulative tiers collectively comprising at least two different compositions relative individual of the insulative tiers. Individual of the at least two different compositions comprise silicon nitride. One of the individual different compositions comprise carbon-doped silicon nitride having at least 0.5 atomic percent more carbon than atomic percent of carbon, if any, in the silicon nitride of another of the individual different compositions. Other embodiments, including method, are disclosed.