The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jul. 14, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Paolo Valerio Testa, Madrid, ES;

Shafiullah Syed, Murphy, TX (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/193 (2006.01); H10D 1/66 (2025.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H10D 1/66 (2025.01); H03F 2200/451 (2013.01); H03F 2200/72 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a common-gate amplifier circuit and methods of operation. The structure includes at least one well in a substrate, a first metal layer connected to a gate of a transistor circuit, a second metal layer overlapped over the first metal layer to form a capacitor, and a third metal layer connected with vias to the first metal layer and overlapped with the second metal layer to form a second capacitor. At least one capacitance in at least one of a junction between the at least one well and the substrate and between overlapped metal layers of the first metal layer, the second metal layer, and the third metal layer.


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